| 摘要 |
PURPOSE:To enable to form a film at a high speed without maintaining a substrate at a high temperature by a method wherein germanium, halogen and the activating species formed by the carbon-containing compound for formation of a film are introduced, and they are chemically reacted by projecting photoenergy. CONSTITUTION:The intermediate layer 12 is constituted by the amorphous film containing germanium atoms, hydrogen atoms and/or halogen atoms, and carbon atoms as constituent atoms, and the P-type impurities such as boron and the like, for example, or the N-type impurities such as phosphorus and the like are contained as the material with which electric conductivity is controlled. When the intermediate layer 12 and a photosensitive layer 13 are formed continuously, active species formed by the compound containing germanium and halogen, and the carbon-containing compound for formation of a film, are introduced into the film forming vacant space as the raw material for the formation of the intermediate layer 12, a chemical reaction is generated by projecting photoenergy on the above-mentioned materials, and a deposition film is formed on the substrate. |
