| 摘要 |
PURPOSE:To reduce the threshold current, by installing the grooves cutting the active layer in the positions which are the right and left outsides of the photo guide absorbing the light of the active layer for laser oscillation with both shoulder parts of the stripe groove for current constriction formed in the element, and are apart more than the distance between both shoulder parts. CONSTITUTION:On the P-type substrate 1, the N-type current blocking layer 6 is grown from the surface of which the groove 7 in the form of a V is grown by etching. The P-type clad layer 2, the P-type active layer 3, the N-type clad layer 4, and the N-type cap layer 5 are grown in order on the substrate. After the N-side electrode 9 is deposited, the mesa groove 8 is formed on both sides of the groove 7 in the form of V, from the surface of the N-type electrode 9 to the depth reaching the current blocking layer 6. The P-side electrode 10 is deposited and heated to make both the electrodes 9 and 10 alloyed at the same time. Thus, the generation of higher mode is suppressed, and the ineffective carrier for laser oscillation is reduced. Accordingly, the threshold current can be kept small.
|
