| 摘要 |
PURPOSE:To obtain a semiconductor device which has high integration, high reliability and high performance by forming an arbitrary and ultrafine field region in a self-alignment with respect to a groove without mask matching margin. CONSTITUTION:With a resist pattern 102 as a mask a silicon substrate 101 is etched to form a groove 103, boron is implanted, and a heat treatment is then executed to form a P<+> type region 104 as a channel stopper region on the bottom of the groove 103. Then, an SiO2 is accumulated to become a thickness (0.6mum) of half (0.5mum) of the width S of the hole of the groove 103. Then, when a phosphorus silicide gas film (PSG film) 110 is accumulated on a CVD- SiO2 film 105 and heat treated, the film 119 is melted, the recess of the film 110 corresponding to the recess 118 of the film 105 is eliminated and flattened. Then, the films 119 and 105 are entirely etched with fluoride ammonia until the substrate 101 except the groove 103 is exposed to form a field region 106 buried in the substrate 101. |
