| 摘要 |
PURPOSE:To form a polycrystalline semiconductor film on the second substrate at a low price by a method wherein a semiconductor film is formed on the first substrate which is proof against a high temperature treatment, a heat treatment is performed thereon, and the heat-treated semiconductor film is moved to the inexpensive second substrate. CONSTITUTION:The first film 2 is formed on the first substrate 1 such as a quartz substrate, for example, and a semiconductor film 3 is formed on the first film 2. Then, a heat treatment is performed on the first quartz substrate 1, whereon the first film 2 and the semiconductor film 3 are formed, using a laser beam, a lamp and the like. As a result, the semiconductor film 3 is crystallized, and a polycrystalline semiconductor film 4 is formed. Subsequently, the second film 5 is formed on the polycrystalline semiconductor film 4, and the second substrate 6 such as a glass substrate is adhered to the second film 5. Lastly, the first film 2 is removed, the expensive first quartz substrate 1 having heat-resisting property is exfoliated from the polycrystalline semiconductor film 4, and the polycrystalline film 4 is obtained on the inexpensive second glass substrate 6. |
