| 摘要 |
PURPOSE:To enhance selective solubility between the photoresist at the exposed areas and the nonexposed areas by incorporating a specified quaternary ammo nium compd. in a developing soln. of a positive type photoresist composed essentially of an org. base contg. no metal ion. CONSTITUTION:The positive type photoresist developing soln. capable of extreme ly enhancing the selective solubility of a resist film at the exposed areas and nonexposed areas, and at the same time, enhancing resolution, and restraining adhesion of the residues of the thin resist film and the scum is composed essen tially of the org. base contg. no metal ion in an amt. of 1-10pts.wt., preferably, 2-6 per 100pts.wt. of an aq. soln., further contains, in an amt. of 0.01-10, preferably, 0.1-10pts.wt. per 100pts.wt. of said solute, the quaternary ammonium compd. represented by the formula shown on the right in which R is <=8C alkyl; and X is halogen or OH. The developing soln. may contain other additives usually used, when needed, such as humectant, stabilizer, or solubilizing aid. |
