| 摘要 |
PURPOSE:To prevent quality deterioration of product to be deposited due to mixing of gas, by using a specified manifold in accordance with kinds of gas, at depositing compd. semiconductor and polycrystal, etc. on semiconductor substrate by CVD method. CONSTITUTION:On GaAs substrate, AsH3, TMG, TMA as growing gas, H2Se, DEZn, etc., as doping gas are supplied, to form GaAs-AlGaAs multilayer structure by CVD method. In this case, a supplying line 3 and an exhausting line 2 of reaction gas in the manifold A of CVD apparatus are provided parallelly in a single block 1 to conduct a prescribed quantity of carrier gas in supplying and exhausting directions, supplying and exhausting valve seats 7 and 8 are provided between both lines 2, 3, therethrough, the manifold A in which valve rod side and another side are connected to exhausting line and supplying line respectively is used. Stagnation of gas between valve seat and supplying line is decreased to prevent mixing with another gas and manifold is miniaturized, to prevent deterioration in quality of deposited product due to mixing of gas.
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