| 摘要 |
PURPOSE:To obtain a garnet thin-film element having vertical magnetization characteristics by orientation-growing a Ba1-x-ySrxCayF2 film (where 0<=x+y<1) on a substrate and further orientation-growing a garnet thin-film on the film. CONSTITUTION:An silica glass substrate 2 is placed on a sample base 1 for a vacuum deposition device. An evaporating substance BaF2 4 is inserted into the hollow section of a filament 3. The inside of the device is evacuated to the fixed degree of vacuum, and BaF2 4 is heated by the filament 3. Consequently, a Ba1-x-ySrxCayF2 film 6 is formed on the silica glass substrate 2 (where 0<=x+y <1). The silica glass substrate 2 is placed on an electrode plate 7 made of stainless for a high-frequency sputtering device, and glow discharge is executed between electrode plates 7, 8. The surface of a target 9 is sputtered by the discharge, and the upper section of the BaF2 film 6 is coated with eliminated atoms.
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