| 摘要 |
PURPOSE:To obtain a resist sensitive to far UV rays, enhanced in resolution, and improved in dry etching resistance by evaporating a specified org. silane compd. in reduced pressure, and executing vapor phase photochemical reaction in the presence of O2 or N2O to deposit a resist film. CONSTITUTION:The org. silane compd. represented by formula I, R1, R2 each being an org. group, X being H or halogen, and n being >=1, is evaporated in reduced pressure, introduced into a reaction chamber together with O2 or N2O, and a thin org. silicon type film is deposited on a semiconductor substrate by the vapor phase photochemical reaction. It is preferred to use mercury vapor as the photosensitizer of the vapor phase photochemical reaction, and a far UV lamp is used as a light source, thus permitting the resist to be directly formed on the substrate by the vapor phase reaction, accordingly, a uniform thin film of <=1mum thickness to be obtained with out forming any pinhole, the resist to be improved in etching resistance, enhanced in resolution of a formed pattern, and in photosensitivity because a film of Si-O-Si structure is partially formed by the photochemical reaction in the coexistence of O2 or N2O. |
