| 摘要 |
A gate turn-off thyristor has a first emitter layer having a P+ P- emitter structure which is in contact with an anode electrode and a second emitter layer having an N-type multi-emitter structure which is in contact with cathode electrodes. To reduce power dissipation in the turn-off process, the first emitter layer mainly consists of low impurity concentration regions, and each high impurity concentration region is formed to have a substantially uniform width and to surround the low impurity concentration region formed within a region of the first emitter layer immediately below one of the emitter strips of the second emitter layer.
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