| 摘要 |
PURPOSE:To reduce the gate extraction resistance in the final stage of turn-OFF, by forming the region not directly connected to the gate terminal, in the high impurity concentration layer formed within the cathode-base layer. CONSTITUTION:The N-type cathode-emitter layer 2 is formed on the circular semiconductor layer 1. Adjoining the N-type anode-base layer 3, the P-type cathode-base layer 4 is formed. After the P-type low resistance buried gate layers 5 and 6 of high impurity concentration are diffused, the P-type semiconductor layer 7 is grown, on which the N-type cathode-emitter layer 2 is formed. To the exposed surfaces of the layers 2 and 6, the cathode electrode 8 and the gate electrode 9 are contacted to each other with low resistance. |
