| 摘要 |
PURPOSE:To enable the control of the pattern size of a polysilicon film with high accuracy by enhancing an etching rate of the polysilicon film in the implantation region compared with other parts by effecting ion implantation of impurity into the whole film thickness of the polysilicon film by using the photosensitive resin pattern formed on the polysilicon film as a mask. CONSTITUTION:The surface of the polysilicon film 3 grown on an insulating film 2 on a semiconductor substrate 1 is subjected to an oxidation to form an insulating film 4. Next, photoetching process is carried out to pattern the insulating film 4 and a photosensitive resin pattern 5. By using these insulating film pattern 4 and photosensitive resin pattern 5 as masks, ion implantation process 6 is carried out in a manner impurities are spread into the whole thickness of the exposed polysilicon film 7 so that the polysilicon film having different film qualities between the exposed part and the covered part is formed. Then etching process 8 is done by using the insulating film pattern 4 and the photosensitive resin pattern 5 as masks. Consequently, because the etching rate of the polysilicon film after the ion implantation process 6 of impurity is larger than that of the polysilicon film 4 in the part covered with the photosensitive resin pattern 5, the etching process according to a protective film can be made. |
