| 摘要 |
PURPOSE:To produce an Si single crystal whose As distribution is optional in the direction of crystallographic axis and uniform in the cross section by controlling the flow rate and the direction of flow in the As-containing atmosphere in case of producing the As single crystal whose As is the dopant. CONSTITUTION:A polycrystal Si is introduced into a quartz crucible 10 in a chamber 1 above the single crystal 31 and is heated to obtain a melt 4, the connected crystal 3 of the Si single crystal is dipped and then pulled up gradually to permit the growth of the Si crystal rod 5 at its tip. When As is contained into the Si single crystal as the dopant, As placed in a container 26 is added into a molten Si 4. In this case, a tubular body 9 concentric with the single crystal 5 is disposed, and an inert gas such as Ar is forced to flow down from the top of the tubular body 9. In a pulling-up process of the single crystal whose dopant is As, the quantity of the flow of Ar gas is controlled to regulate the volatizing amount of As from the Si melt 4 by adjusting the pulling-up condition, thereby the concentration of the dopant As in the direction of the axis of the single crystal 5 can be regulated optionally and the single crystal 5 whose As concentration is uniform in its cross section can be produced.
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