| 摘要 |
PURPOSE:To form a capacitor having high withstanding voltage onto an element isolation region by shaping a single crystal Si film onto an inter-layer insulating film on an element region and forming SiO2 or a Ta2O5 film onto single crystal Si through a thermal oxidation method. CONSTITUTION:Polycrystalline Si or amorphous Si 3 is shaped onto an Si substrate 1 and SiO2 2 through a CVD method, the polycrystalline Si or amorphous Si 3 is irradiated by a laser, and the polycrystalline Si or amorphous Si 3 is changed into single crystal Si 3' through a bridging epitaxial method. SiO<2>'2 is formed onto the surface of the single crystal Si 3' through annealing in an oxidizing atmosphere, and an electrode 4 is shaped onto SiO<2>'2. Accordingly, a capacitor having excellent withstanding voltage or small defect density can be formed onto an element region by the superior effect of SiO2, and the single crystal Si can be grown onto an element isolation region, thus displaying an effect even on the increase of the degree of integration of a memory. |
