Optimized process for forming borophosphosilicate glass.

摘要

An optimum combination of high deposition rate and low particulate levels is provided by depositing borophosphosilicate glass at a substrate-adjacent temperature of about 340 DEG C from the gaseous constituents silane, oxygen, a hydride of boron, a hydride of phosphorus and a carrier gas. The process is applicable to a wide range of oxide:hydride ratios.