| 摘要 |
PURPOSE:To improve yield and reproducibility by forming a mesa stripe containing a clad layer and a semiconductor layer through etching up to an active layer and melting back the active layer in regions except the mesa stripe. CONSTITUTION:An N-type clad layer 2, an active layer 3, a P-type clad layer 4 and a GaAs layer 5 are shaped onto an N-GaAs substrate 1 in succession, and a mesa stripe 6 is shaped by using a photoetching method. Etching is stopped at the active layer 3 by employing a selective etching method at that time, and second crystal growth is conducted. An active layer 3b in regions except the mesa stripe 6 is removed by employing the melt-back technique of an LPE method at that time, and only GaAs is melted back selectively and a buried layer 7 and a cap layer 8 are formed in succession. Lastly, a Zn diffusion layer 9 is formed, a current path is shaped, and a P-type electrode 10 and an N-type electrode 11 are formed. Accordingly, the buried structure of an AlGaAs group material having high performance is acquired with excellent yield and reproducibility.
|
