发明名称 SEMICONDUCTOR LASER ARRAY DEVICE
摘要 PURPOSE:To obtain a laser light synchronized in light phase with high output by commonly providing the same active waveguides on other laser end face in the adjacent active waveguide at one laser end face. CONSTITUTION:A V-shaped groove 20 for specifying an active waveguide is formed in an N-type GaAs layer 2 on a P-type GaAs substrate 1, a P-type AlxGa1-xAs clad layer 3, an AlyGa1-yAs active layer 4, an N-type AlxGA1-xAs clad layer 5, an N<+> type GaAs cap layer 6 are formed thereon, and an N-type electrode 7 and a P-type electrode 8 are provided. In this case, a curved region 111 is formed to commonly have grooves 20 adjacent on one mirror surface 9 and the same groove on the other mirror surface 10. Then, a laser light in the adjacent active waveguide is cancelled by 180 deg. phase displacement mode at the combining portion of the waveguide to strengthen those of the same phase each other. Thus, a strong laser light output synchronized in the light phase is obtained.
申请公布号 JPS61225887(A) 申请公布日期 1986.10.07
申请号 JP19850067448 申请日期 1985.03.29
申请人 SHARP CORP 发明人 TANETANI MOTOTAKA;MATSUI KANEKI;YAMAMOTO SABURO;YANO MORICHIKA
分类号 H01S5/00;H01S5/40 主分类号 H01S5/00
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