INTEGRATED SEMICONDUCTOR CIRCUITS WITH BIPOLAR COMPONENTS AND METHOD OF PRODUCING SAME

摘要

Integrated semiconductor circuits with bipolar components preferably with at least one bipolar transistor and at least two Schottky diodes having different threshold voltages are disclosed along with a method of producing such circuits. The contact from a metal interconnect level to diffused active regions of the circuits comprises a directly deposited silicide of a high melting point metal such as tantalum tungsten molybdenum or titanium. In addition to achieving independence from a metallization grid and achieving lowresistance wiring, the use of the silicide, in conjunction with the high temperature stability of silicides enables its simultaneous use as an implantation mask. The invention allows the production of bipolar integrated circuits in VLSI technology.