| 发明名称 |
PHOTOVOLTAIC DEVICE |
| 摘要 |
<p>A PIN junction photovoltaic device using a P-type or N-type semiconductor having an optical band gap of not less than about 1.8 eV and a dark conductivity of not less than about 10-8 (.OMEGA..cm)-1 at 20.degree.C. in the layer positioned on the opposite side to incidence of light. The photovoltaic device has an improved efficiency.</p> |
| 申请公布号 |
CA1212444(A) |
申请公布日期 |
1986.10.07 |
| 申请号 |
CA19830442062 |
申请日期 |
1983.11.28 |
| 申请人 |
KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA |
发明人 |
TAWADA, YOSHIHISA;TSUGE, KAZUNORI |
| 分类号 |
H01L31/04;H01L31/0392;H01L31/052;H01L31/075;(IPC1-7):H01L31/04 |
主分类号 |
H01L31/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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