| 发明名称 |
Method for thinning silicon |
| 摘要 |
A method for substantially uniformly thinning a silicon layer comprises providing a silicon layer having a surface, oxidizing substantially all of the surface so as to transform a uniformly thick layer of silicon into oxide, and removing all the oxide so as to expose the silicon layer.
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| 申请公布号 |
US4615762(A) |
申请公布日期 |
1986.10.07 |
| 申请号 |
US19850729165 |
申请日期 |
1985.04.30 |
| 申请人 |
RCA CORPORATION |
发明人 |
JASTRZEBSKI, LUBOMIR L.;CORBOY, JR., JOHN F.;PAGLIARO, JR., ROBERT H.;SOYDAN, RAMAZAN |
| 分类号 |
H01L21/20;H01L21/306;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/20 |
| 代理机构 |
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代理人 |
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| 主权项 |
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