| 摘要 |
PURPOSE:To prevent the generation of voids in a film by a method wherein the compound, which releases a substance having an etching function when the compound is photo-decomposed, and the substance with which stabilized material is formed when it is easily reacted with a decomposition formed substance, and used for formation of the title thin film. CONSTITUTION:The raw gas of the compound 1 which releases a substance containing the component of a film and having the etching function on a film when it is decomposed by light, is photo-decomposed in a reaction chamber, the raw has of the material 2, with which a stabilized substance is formed by the reaction with said decomposition growing substance, is intermittently introduced into the reaction chamber, and a desired film is formed on the heated substrate. While the gas of the material 2 is being introduced into the reaction chamber, the etching material formed by the decomposition of the gas of the compound 1 is turned to a stabilized substance by the reaction with the gas of the material 2, and a film is formed without performing an etching of the film. When the gas of the material 2 is not introduced into the reaction chamber, the film is etched. Through these procedures, the film having excellent coating adaptability for a steps and also voids are hardly generated there can be formed. |
