发明名称 Manufacturing a bump electrode with roughened face
摘要 The invention includes a semiconductor device, and a method for making the same, wherein bumps of a semiconductor chip and inner leads of a film tape carrier can be securely bonded to each other by thermal welding using a heating unit. A semiconductor wafer 50 is etched using a potassium iodide or ammonium iodide solution. By the etching, a barrier metal layer 48 is removed while the upper face of a bump 10 is simultaneously roughened and many prominences 12 are formed. The formation of the prominences 12 increases the surface area of the upper face of the bump 10 and improves the bonding between the bump 10 of the semiconductor chip and the lead of the film tape carrier.
申请公布号 US2005062158(A1) 申请公布日期 2005.03.24
申请号 US20040988553 申请日期 2004.11.16
申请人 SEIKO EPSON CORPORATION 发明人 TAKANO MICHIYOSHI
分类号 H01L21/60;H01L21/3213;H01L21/603;H01L23/485;(IPC1-7):H01L23/48 主分类号 H01L21/60
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