| 摘要 |
PURPOSE:To obtain a good ohmic contact between the conductive layers by destroying the nhutural oxide films to be formed on the interfaces between the substrate and the conductive CONSTITUTION:3000-Angstrom thick CVD oxide films 8 are respectively formed on field oxide films 2, a gate oxide film 4 and a gate electrode 5. Wiring layers 11 and 12 consisting of a 2000-Angstrom . |
