SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PURPOSE:To increase ionizing endurance quantity by piling an insulation film of an oxide thin film on the surface of a transistor after it is formed. CONSTITUTION:An SiO2 film 43 2000Angstrom thick or more is made on the n-type epitaxial layer 42 on an n<+> Si layer 41, an aperture is made and a p-layer 48 and an n<+> layer 49 are formed sequentially. The SiO2 film 43 is etched and removed, an SiO2 film 46 50-200Angstrom thick is made in high temperature O2 and a PSG film 47 500-3000Angstrom thick is piled. An electrode 45 is provided and all are completed. The accumulation of fixed electric charge due to the irradiation of ionizing radiation is reduced by the compound film of the film 46 and the film 47, the effect of the interface is restrained and the reduction of the current amplification factor of a bi-polar transistor can be prevented.