| 摘要 |
PURPOSE:To increase a film formation rate, to improve reproducibility and to equalize the quality of a film by introducing a compound containing silicon and halogen and an active species into a film forming space, operating heat energy to these substances, chemically reacting these substances and forming a deposit film on a base body. CONSTITUTION:Heat energy is worked to a compound containing silicon and halogen and an active species, which is shaped from a compound containing silicon for forming a film and activated in an activating chamber 123, under the coexistence of these substances in place of the generation of plasma in a film forming space 101 for shaping a deposit film. Chemical interaction by these substances is generated or promoted and amplified, thus preventing an adverse effect by etching action, abnormal discharge action, etc. during film formation on the deposit-film shaped. Accordingly, the film can be formed at high speed, and reproducibility in film formation and the quality of the film are enhanced, thus equalizing the quality of the film while also enabling forming the film on a base body 103 hardly having heat resistance. |
