| 摘要 |
PURPOSE:To compose an I<2>L gate circuit of heterojunction bipolar transistor so as to realize an operation with high speed and low consumption power, by using a reverse p-n-p heterojunction bipolar transistor in the longitudinal direction of a constant-current source in the I<2>L gate circuit. CONSTITUTION:Each layer of a doped GaAs layer 22, n<+> type AlGaAs layer 23, n-type AlGaAs layer 24, p<+> type GaAs layer 25, and n<+> type GaAs layer 26 is made to epitaxially grow on a p<+> type GaAs substrate 21. Successively, an SiO2 layer 27 is formed on an assigned area, and used as mask to remove a cap layer, and ions are injected there. And then, after removing the SiO2 layer 27, an SiN film 28 and SiO2 layer 29 are piled and used as mask, and epitaxial layers are grooved there to make GaAs layers epitaxially grow into an emitter layer 30, a base layer 31, and a collector layer 32. With an Au/AuZn layer 33 being piled on them, the SiO2 layer 29 serving as mask is removed, a CaF2/Au layer 33 is piled serving as mask, and ions are injected there, to separate the outer base area. Then, after removing the mask of the layer 33, an emitter electrode 34, a collector electrode 35, and an emitter electrode 36 are formed. |
