| 摘要 |
PURPOSE:To obtain a hetero-junction bipolar transistor having a fast switching rate by forming at least one of an emitter-base junction and a collector-base junction having no excess P-N junction except intrinsic regions in a hetero-junction. CONSTITUTION:An SiO2 film 22 is deposited on a semi-insutaling GaAs substrate 21, a hole is bored at a desired position, an N<+> sub-collector region 23 is shaped through ion implantation, the SiO2 film 22 is removed, and an AlGaAs layer 24 and a P<+> type AlGaAs layer 25 are grown. An Si3N4 layer 26 and an SiO2 layer 27 are formed onto the layer 25, and used as masks, and a hole is bored up to the surface of the substrate 21, and an N-type GaAs layer 28, a P<+> type GaAs layer 29, an N-type AlGaAs layer 30 and an N<+> type cap layer 31 are grown on the hole. An AuGe/Au layer 33 is evaporated, the SiO2 layer 27 is peeled, an intrinsic region in a transistor and a region as an external base region are coated with a CaF2/Au layer 34, and the resistance of a P<+> type AlGaAs layer 25 is increased through ion implantation while employing the coating layer as a mask for implantation. The layer 34 is removed, an ohmic electrode and an ohmic contact are shaped, and lastly a wiring is formed.
|
