| 摘要 |
PURPOSE:To obtain a semiconductor device for detecting pressure, which can be integrated and use thereof is simplified, by using at least partial layer forming an insulating film as an elastic expansible material. CONSTITUTION:An element isolation region 11, a gate oxide film 12 and source- drain regions 13 are formed to a P-type silicon substrate 10. A two-pack curing type silicone rubber is applied through a spin application method, and processed through a dry etching method after curing, thus shaping a gate insulating film 14 made of the silicone rubber. A contact hole is bored to source-drain regions, and source and drain wirings 15 and a gate electrode wiring 16 are formed by Al. Accordingly, a semiconductor device for detecting pressure, which can be integrated and has excellent linearity and stability of characteristics, in which hysteresis is not generated and use thereof is simplified, can be manufactured.
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