发明名称 CHROMIUM TARGET FOR SPUTTERING
摘要 PURPOSE:To improve the adhesion of a thin chromium film by regulating the amount of iron contained inevitably in a chromium target for sputtering used to form a thin chromium film to a specified value. CONSTITUTION:A chromium target for sputtering used to form a thin chromium film contains inevitably 70-5,000ppm iron in general. This iron deteriorates the adhesion of a formed thin chromium film to a base, so the amount of the iron contained inevitably in the composition is regulated to 0.5-45ppm.
申请公布号 JPS61221361(A) 申请公布日期 1986.10.01
申请号 JP19850061606 申请日期 1985.03.26
申请人 MITSUBISHI METAL CORP 发明人 FUKUSHIMA MASATOSHI;SUEHIRO KOSABURO;FUKUI SOICHI
分类号 C23C14/14;C23C14/34 主分类号 C23C14/14
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