发明名称 |
Method of manufacturing a semiconductor device including an implantation step. |
摘要 |
<p>@ A method of manufacturing a semiconductor device involves the step of carrying out the implantation of an impurity in the main plane of a GaAs substrate (31) for the simultaneous formation of a plurality of regions (35, 36). When the angles formed with the perpendicular implantation of silicon ions in the GaAs main plane and the main orientations of GaAs substrate are expressed by the Euler angles (λ, µ, 9), then the crystal orientation is so prescribed as to satisfv the followina conditions:thereby suppressing the occurrence of channeling in the implantation of ions in the substrate main plane and consequently ensuring substantially uniform impurity concentration in the plural regions.</p> |
申请公布号 |
EP0195867(A2) |
申请公布日期 |
1986.10.01 |
申请号 |
EP19850308503 |
申请日期 |
1985.11.22 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MIKAMI, HITOSHI PATENT DIV. K.K. TOSHIBA;FUKUDA, KATSUYOSHI PATENT DIV. K.K. TOSHIBA;YASUAMI, SHIGERU PATENT DIV. K.K. TOSHIBA |
分类号 |
H01L29/812;H01L21/265;H01L21/338;H01L29/04;H01L29/80;(IPC1-7):H01L21/265 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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