| 摘要 |
PURPOSE:To stabilize an operation by continuously supplying a half precharge level to the complementary data line of the memory array of one non-selected side by a level conpensating circuit even when, a continuous access like a static column mode or a page mode is carried out to the other memory array. CONSTITUTION:The data line of a memory array MARY-L, MARY-R in which a word line is not selected is brought into a floating condition, thereby, in order to prevent is precharge level from level changing by a coupling or a leak current, a level compensating circuit is provided. Namely, to complementary data lines D, inverse of D of a left side memory array MARY-L, a dividing voltage of Vcc/2 formed by potential dividing resistances R1, R2 is supplied through transmitting gates MOSFET Q1-Q4 controlled by a timing signal of inverse of phiL. Also in the right side memory array MARY-R, a similar level compensating circuit is provided.
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