| 摘要 |
PURPOSE:To flatly form a thin film of high quality without damaging a sample substrate by separating a plasma generating chamber and a sample chamber, and further applying a bias electrode of RF to a substrate electrode to control ions, thereby accumulating the film. CONSTITUTION:A sample substrate 16 is placed on a substrate electrode 12 of a thin film forming device, SiH4 is supplied from a gas supplying mechanism 17, O2 is supplied from a gas supplying mechanism 15 to generate a plasma, and an SiO2 is accumulated on the substrate 16. Since an RF bias is simultaneously applied to the electrode 12 at this time, O2 ion sputtering effect is generated on the substrate 16. Then, Ar gas is added in addition to SiH4 gas and the O2 gas, and the RF bias is similarly applied to the electrode 12 to accumulate the SiO2. The etching speed can be increased by supplying the Ar gas, and the film accumulating speed and the etching velocity are substantially equalized. Thus, the SiO2 becomes a flat structure.
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