| 摘要 |
PURPOSE:To provide a semiconductor device which can respond even to a higher clock frequency and possesses linearity by interposing first, second and third gate electrodes between an input diode and a group of charge-transfer electrodes, disposing one electrode close to the third gate on an insulating layer on a semiconductor substrate and arranging the remaining electrodes on an insulating layer on the reverse conduction type layer mounted to the substrate. |
