| 摘要 |
PURPOSE:To enable to fully correspond to the large-sized material to be processed by a method wherein the processing chamber, which constitutes a chemical vapor deposition (CVD) device, is composed of a susceptor of an overhang beam structure having a plurality of stages and a movable body consisting of a reaction gas feeder, which performs an additional function as an electrode, and of the similar overhang beam structure as above which is inserted between said stages. CONSTITUTION:A supporting frame 6 of overhang beam structure whereon a plurality of susceptors 7 having a heater 9 on the lower side, are arranged horizontally inside one of vertical walls of the processing chamber 1 which constitutes a CVD device, and the aperture part 8 of a wafer 3, which is the material to be treated, are provided on the vertical wall of the supporting frame 6 corresponding to each susceptor. Also, a plurality of overhang beam structured gas feeding passages which perform an additional function as an electrode 11 having a gas blow-out part 15 are provided on the opposing vertical walls of the processing chamber 1, they are supported by a hollow movable member 10, and the member 10 is protruded outside the chamber 1. The titled device is constituted as above, the wafer 3 is placed on the susceptor 7 from the door 5 and the hole 4 where wafers are taken in and out provided on the wall of the chamber 1, reaction gas 14 is fed from the movable member 10, the feeding passage 13 is moved forward to and moved backward from to a point located between the stages of each susceptor 7. |
