| 摘要 |
PURPOSE:To enable to easily perform an etching on a transparent conductive film by a method wherein the transparent conductive film in which indium oxide and tin are added is exposed to the vapor of an acid solution containing a metal substance which generates hydrogen by the reaction with the acid solution. CONSTITUTION:When an In2O3:Sn transparent conductive film 2 is provided at the upper part of a container which contains hydrochloric acid 4 containing an Al thin film 5 in such a manner that the film 2 is exposed to the hydrochloric acid, indium oxide is reduced by the active hydrogen generated by the reaction between the Al thin film and hydraulic acid, and it is turned to moisture, In, InO, In2O and the like, and they are dissolved by the vapor of hydrochloric acid. Also, after the transparent conductive film 2 whereon a resist 6 is adhered has been exposed to the vapor of hydrochloric acid in the same manner as above, it is washed by pure water and dried up, and when the resist is removed, a pattern can be formed in a highly accurate manner. |
