| 摘要 |
PURPOSE:To increase the reliability of connection and make fine structure possible, by protruding the pillar previously out of the lower wiring layer on which the interlaminar insulating film is formed, eliminating the film by etching to expose the surface of the pillar, and forming the upper wiring layer to be connected to the lower wiring layer. CONSTITUTION:When the lower wiring layer 2 of aluminum alloy film, etc. is formed on the silicon semiconductor substrate 1, the pillar 9 is formed so as to protrude on the lower wiring layer 2. The polyimide film 10 as the interlaminar insulating film is formed on the main surface of the substrate 1 and the whole surface of the lower wiring layer 2 containing the pillar 9. The surface of the pillar 9 is exposed by etching of the surface of the polyimide film 10, and on the polyimide film 10 containing the exposed surface of the pillar 9, the upper wiring layer 7 of aluminum alloy film, etc. is newly formed in accordance with the definite pattern. The upper wiring layer 7 is connected to the lower wiring layer 2 through the surface part of the pillar 9. Thus, the step difference at the connection part to the upper wiring layer can be extremely reduced so that the interconnection between the upper and the lower winding layers is surely performed. |
