发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To prevent the voids of an Al wiring electrode by overlapping and connecting an Al wiring layer in a non-wire bonding section in a barrier metallic layer. CONSTITUTION:An electrode pad at the end section of an Al wiring 3 is formed by a barrier metallic layer 4 overlapped to an Al pad section 2. A gold fine wire 1 is connected on the metallic layer 4 through ball bonding. Consequently, a distance between the edge end of the pad section 2 and the ball bonding section of the fine wire 1 is lengthened, and the reaction time of these pad section and ball bonding section is retarded. Accordingly, the voids of a wiring 3 electrode are prevented.</p>
申请公布号 JPS61208249(A) 申请公布日期 1986.09.16
申请号 JP19850050039 申请日期 1985.03.13
申请人 MATSUSHITA ELECTRONICS CORP 发明人 SUIZU SATOSHI
分类号 H01L21/60;H01L23/485 主分类号 H01L21/60
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