| 摘要 |
PURPOSE:To prevent the increase of the quantity of charges stored in capacitor sections and the generation of interference leakage between the capacitor sections by forming a groove for isolating elements to the surface of a substrate between the groove-type capacitor sections. CONSTITUTION:A groove 21 deeper than the depth of grooves 15, 15 for capaci tors is formed to the surface of a substrate 1 between the grooves 15, 15 for capacitors, and an element isolation region 22 consisting of an SiO2 film is shaped into the groove 21. According to such a constitution, leakage currents between the capacitor sections is removed, and a DRAM having the large quan tity of charges stored can be acquired. |
