Selective semiconductor coating and protective mask therefor

摘要

An improved method of selectively depositing coatings onto bodies of semiconductor material employs as a protective mask an alkyl ester of a sulfosuccinate salt. The mask material is applied to areas which are to be kept free of the coatings. The overspray of a desired coating, onto the protective mask is deposited in a cracked, non-continuous manner, as opposed to the smooth crystalline layer being deposited over the semiconductor body. This overspray coating can be readily removed.