| 摘要 |
PURPOSE:To prevent any disconnection from occurring by a method wherein a wiring corner part comprising a lower wiring layer made of polysilicon film is rounded by thermal oxidation. CONSTITUTION:An oxide film comprising the third oxide film 9 is arranged on a polysilicon film 5 in parallel with the oxide film 9 by pyro-oxidation e.g. at 1,000 deg.C for around 150min simultaneously the polysilicon film 5 is converted into the oxide film 9 from the surface side to form the oxide film 9 around 6,000Angstrom in total film thickness. At this time, the oxide film is formed on the polysilicon film 5 below a pattern 8 to provide both shoulder parts of the polysilion film 5 comprising a gate electrode with pertinent radius 5a. Next the oxide film 9 and the residual polysilicon film 5 not yet converted is anisotropically etched by RIE process using the pattern 8 as a mask to leave the polysilicon film 5 below the pattern 8. Through these procedures, a wiring may be processed without any possibility of disconnection at all. |
