| 摘要 |
PURPOSE:To micro-miniaturize the peripheral parts of the contact hole and to obtain a manufacturing method to contribute to the micro-miniaturization of a semiconductor integrated device by a method wherein the forming method of the contact hole based on a specially novel idea is adopted. CONSTITUTION:A first insulating film 2 is provided on a P-type silicon substrate 20, and moreover, a first conductive film 22 and a second insulating film 23, and furthermore, a buffer film 24 are stacked, resist patterns 25 are formed, the resist patterns 25 are removed by performing an anisoptropic etching using an RIE technique and patterns 26, which are polymeric films, are formed. Then, N-type dopant is buried in using the patterns 26 as masks, an insulator film of the same kind as the second insulator film 23 is annexed on the whole surface as shown by broken lines 28 and an etching is performed on the insulator film using an RIE technique. As a result, a third insulating film 29 can be annexed on each side surface of the polymeric films, patterns 26. Then, the buffer film 24 is removed by performing an etching, an interlayer insulating film 30 is formed, resist patterns 31 are formed on the interlayer insulating film 30, the interlayer insulating film 30 is selectively removed by performing an etching, and moreover, the interlayer insulating film between the pattern elements and part of the first insulating film 21 are removed by performing an etching. |
