| 摘要 |
PURPOSE:When different kinds of crystal layers are allowed to grow on the base, an amorphous layer of the material is formed on the base, locally crystallized, then the objective crystal layer is allowed to grow whereby the objective crystal layers having good properties are formed with high reproducibility. CONSTITUTION:The Si base on which GaAs crystal layers is to be grown is placed in the equipment for epitaxial crystal growth with molecular beam, Ga and As are fed from their vapor sources to form an amorphous GaAs layer on the Si base 11. Then, the base is enclosed in a quartz tube and irradiated with a stripe of Ar laser from outside, as the laser is scanned to form a crystalline stripe of GaAs 3 in the amorphous GaAs layer 12. Then, the resultant base 11 is placed in the epitaxial growth unit again to effect the growth of single crystal 13 on the amorphous GaAs layer 12 having partially crystallized GaAs region 3.
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