| 摘要 |
PURPOSE:To obtain an SiO2 film characterized by very minute feature and high dielectric strength, by forming a gate oxide film by thermal oxidation, and treating the film in oxygen plasma. CONSTITUTION:A plurality of silicon wafers 2 are placed in a chamber 1 formed by high purity quartz and the like, and a bias electric field is applied through a supporting table 3. A field oxide film is formed on the silicon wafer by selective oxidation. In an MIS-transistor forming region, an SiO2 film, which is to become a gate insulating film of the transistor, is formed. After the wafers are set in the chamber, evacuation (a) is performed, and the inside is substituted with an oxygen atmosphere of 0.5-1torr. A high frequency electric field generated by a magnetron is guided to the chamber through a waveguide. Oxygen gas is excited, and plasma is generated. Usually frequency of 2.45 GHz is used. But, the frequencies which can generate plasma, can be all utilized. |
