Improvements in semiconductor structures and devices.

摘要

An artifical semiconductor (1) is composed a of multilayer structure with thin films of metal (1a) or insulator (1b) or semiconductor in alternation. The semiconductor (1) is combined with one or more other bodies (2, 3, 5) which may be of similar multi-layered construction but with a different period or film thickness to provide a diode, a transistor or an amplifying device with a high speed response to millimeter waves.