| 摘要 |
PURPOSE:To prevent the inter-layer short circuit by a method wherein, after wiring on the first layer is formed, an inter-layer insulation film is laminated to improve the anti-RIE resistivity of a polyimide film. CONSTITUTION:After an oxide film 12 is formed on a semiconductor substrate 11, a metal consisting of Al-Si-Cu is evaporated on the whole surface of the substrate by sputter method, and patterning is performed to form wiring 13 on the first layer. After a silicon nitride film 14 is laminated, the substrate is coated with a polyimide film 15, and then CVDSiO2 film 16 is laminated. Further, the inter-layer insulation film corresponding to a part of the wiring 13 is selectively removed to form a contact hole 17. Al-Cu is evaporated by sputter method, and patterning is performed to form a wiring of the second layer which is to be connected to the wiring 13 through the contact hole 17. After that, a silicon nitride film 19 is formed to produce a semiconductor device. |
