| 摘要 |
PURPOSE:To obtain a high performance photo-sensor by a method wherein phosphorus is continuously added to the I-layer of amorphous silicon layers of an amorphous silicon diode so that the concentration of the phosphorus is continuously increased, preventing the electrons and positive holes from being recoupled. CONSTITUTION:The method is an improvement of the formation of amorphous silicon layer to produce the voltage gradient in an I-type amorphous silicon layer. A voltage gradient with sharp inclination is produced in the I-layer amorphous silicon. Thus, an inclination of the energy band is produced in the I-layer amorphous silicon layer, allowing a pair of an electron and a positive hole produced with light-irradiation to rapidly move with lesser chance to be recoupled without lowering the photo-current. Moreover, phosphorus is added to the I-layer amorphous silicon so that the resistance of the I-layer amorphous silicon is decreased to increase the forward direction current, thereby allowing the production of a highly sensitive photo-sensor. |
