Electron beam peripheral patterning of integrated circuits

摘要

Silicon wafers are imprinted with microelectronic circuit patterns by first lithographing the outlines or peripheries of all circuit features of a given wafer level by means of a narrow line formed by direct-writing electron beam lithography utilizing a positive electron resist, then using proximity photoprinting to complete the lithography of that level using a positive photoresist and a photomask with oversized opaque areas so that the pattern edges on the wafer exposed to the flux passing through the photomask will fall within the peripheral lines formed by the electron beam.