| 摘要 |
PURPOSE:To make the film thickness of a single crystal film uniform by stopping the growth of the single crystal film by cleaning the solution consisting of a solvent and a solute remaining on the single crystal film. CONSTITUTION:A device for liquid-phase epitaxial growth comprises a single crystal film growing part 10 composed of an alumina cylinder 1, a heater 2 surrounding said cylinder, an alumina table 3 inside the cylinder 1, and a platinum crucible 5 containing a solution 4 of a solute and a solvent, and a cleaning part 13 similarly composed of a cylinder 1, a heater 2, an alumina table 3, and a platinum crucible 12 containing only a solvent 11. A substrate 6 is mounted on a holder 8 rotated by a motor 7 and the holder 8 moves up and down automatically according to the preset program and is attached to an elevating mechanism 14 which moves the holder raised from the single crystal film growing part 10 to the cleaning part 13. Then the solution consisting of a solvent and a solute remaining on the single crystal film is cleaned by the solvent.
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