| 摘要 |
PURPOSE:To melt a semiconductor film on a seed part and on an insulation film properly even if there is a temperature difference between the seed parts and the insulation film by lowering the melting point of the part of the semiconductor film on the seed part. CONSTITUTION:An SiO2 film 12 is formed on a single crystal silicon substrate 11 of surface orientation (100). A part of the SiO2 film 12, which is to be a seed part, is removed to form an aperture 13. In order to remove a natural oxide film and contaminants on the exposed surface of the silicon substrate 11, the silicon substrate 11 is cleansed in HF solution and dried. Immediately after that, a polycrystalline silicon film 14 is formed on the whole surface by heat decomposition of SiH4. Then a germanium layer (material layer) 15 is formed. Leaving the germanium layer 15 on the aperture 13, other part of the germanium layer is removed. Then an SiO2 film 16 is formed as a surface protection film. With this constitution, the melting point of the silicon on the aperture is lowered compared to that of the silicon on the SiO2 film 12 so that it is facilitated to meld the silicon on the aperture 13 and the silicon on the SiO2 film 12 at proper temperature. |
