| 摘要 |
PURPOSE:To enable to utilize the parts as many as possible of the area of the substrate as the generating sections by a method wherein a penetrating hole is provided on the amorphous semiconductor layer of each generating section excluding the generating section positioning at the end on one side of the generating sections and the electrode on one side of the adjacent generating sections is made to extend in the interior of the penetrating hole and is brought into contact with the other electrode. CONSTITUTION:Penetrating holes 81 and 82, to be reached the edge parts of transparent electrodes 21 and 23, are provided on an a-Si layer 3, to be deposited on the whole surface on a transparent electrode 21 and the transparent electrodes 22 and 23, which are formed on an insulating substrate 1. Upper metal electrodes 41 and 42 to oppose to the transparent electrodes 21 and 22 holding the a-Si layer 3 between the upper metal electrodes and the transparent electrodes are provided in such a way that the extended parts 91 and 92 thereof are respectively formed being extended to the center of each one side of the sides of generating sections 20 and 30 adjacent to the upper metal electrodes 41 and 42, which opposes to each of the upper metal electrodes 41 and 42 on the sides of the adjacent generating sections 42 and 43, and the end parts thereof are made to extend in the interior of the penetrating holes 81 and 82 and are brought into contact with the transparent electrodes 22 and 23 in connecting parts 61 and 62. As the connecting parts 61 and 62 are provided at the positions being surrounded with the a-Si layer 3 in such a way, the area of the substrate 1, which is used for the connection of the transparent electrodes and the upper metal electrodes, is small and the effective area of the generating sections is increased. |
