发明名称 SEMICONDUCTOR CIRCUIT FOR A DYNAMIC RANDOM ACCESS MEMORY
摘要 The circuit can maintain a high level of a sampled signal on an output node O11 without decay in level. When the input level sampled by Q13 rises, complementary output nodes N11 and N12 of a delay circuit B1 initially remain at "1" and "0" and a capacitor C11 charges through Q11. When N12 switches to "1" after the delay, a node N13 goes more positive than VDD and turns a transistor switch Q12 hard on to connect VDD to 011. In other embodiments the delay circuit drives the transistor switch through a bootstrap circuit.
申请公布号 DE3071677(D1) 申请公布日期 1986.09.04
申请号 DE19803071677 申请日期 1980.08.07
申请人 NEC CORPORATION 发明人 ISHIMOTO, SHOJI
分类号 G11C11/417;G06F13/40;G11C7/00;G11C11/409;G11C11/4093;G11C11/4096;H03K5/02;H03K19/017;(IPC1-7):G11C11/24 主分类号 G11C11/417
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